jiangsu changjiang electronics technology co., ltd EMD12 features z both the dtc144e chip and dta144e chip in a package . z mounting possible with sot-56 3 automatic mounting machines. z transistor elements are independ ent, eliminating interference. z mounting cost and area be cut in half. marking: d12 t r1 absolute maximum ratings (ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~40 v i o 100 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 t r1 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v, i o =100 a input voltage v i(on) 3 v v o =0.3v, i o =2ma output voltage v o(on) 0.1 0.3 v i o /i i =10ma/0.5ma input current i i 0.18 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 68 v o =5v, i o =5ma input resistance r 1 32.9 47 61.1 k ? - resistance ratio r 2 /r 1 0.8 1 1.2 - transition frequency f t 250 mhz v ce =10v, i e =5ma, f=100mhz j c ( t sot-563 dual digital transistors (npn+pnp) digital transistors (built-in resistors) www.cj-elec.com 1 d,may,2015
t r2 absolute maximum ratings (ta=25 ) parameter symbol limits unit supply voltage v cc -50 v input voltage v in -40~10 v i o -100 output current i c(max) -100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 t r2 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) -0.5 v cc =-5v, i o =-100 a input voltage v i(on) -3 v v o =-0.3v, i o =-2ma output voltage v o(on) -0.1 -0.3 v i o /i i =-10ma/-0.5ma input current i i -0.18 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 68 v o =-5v, i o =-5ma input resistance r 1 32.9 47 61.1 k ? - resistance ratio r 2 /r 1 0.8 1 1.2 - transition frequency f t 250 mhz v ce =-10v, i e =-5ma, f=100mhz www.cj-elec.com 2 d,may,2015
0.1 1 10 0.1 1 10 100 110 10 100 1000 0.1 1 10 100 1 10 100 1000 0 5 10 15 20 0 2 4 6 8 0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.4 0.8 1.2 1.6 2.0 1e-3 0.01 0.1 1 off characteristics 30 3 0.3 on characteristics t a =25 t a =100 v o =0.3v 3 0.3 30 output current i o (ma) input voltage v i(on) (v) 50 i o i o 30 300 30 3 0.5 v o(on) ?? t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) EMD12 (tr1) 30 t a =25 t a =100 v o =5v 300 3 3 0.3 30 g i ?? output current i o (ma) dc current gain g i v r f=1mhz t a =25 c o ?? capacitance c o (pf) reverse bias voltage v r (v) t a p d ?? power dissipation p d (mw) ambient temperature t a ( ) t a =100 t a =25 0.3 0.03 3e-3 v cc =5v output current i o (ma) input voltage v i(off) (v) 7 \ s l f d o & k d u d f w h u l v w l f v z z z f m h o h f f r p d,may,2015
-0 -5 -10 -15 -20 -25 -30 -35 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 -0.1 -1 -10 -100 -0.1 -1 -10 -100 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 -1 -10 -100 -10 -100 -1000 off characteristics f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse voltage v r (v) t a =100 t a =25 o c v cc =-5v output current i 0 (ma) input voltage v i(off) (v) on characteristics t a =25 t a =100 v o =-0.3v output current i o (ma) input voltage v i(on) (v) t a =100 t a =25 dc current gain g i output current i o (ma) v o =-5v g i ?? i o p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) v o(on) ?? i o t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) -3000 EMD12 (tr2) 7 \ s l f d o & k d u d f w h u l v w l f v z z z f m h o h f f r p d,may,2015
so t - 3 package outline dimensions so t - 3 suggested pad layout c-eleccom
so t - 3 tape and reel c-eleccom
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